Resistive random-access memory (RRAM) is a highly attractive form of RAM, as it promises low-power usage with stable long-term storage, even in the absence of external power. Finding the right materials to create an RRAM cell which incorporates these features is however not easy, but recently researchers have focused their efforts on gallium(III) oxide (Ga2O3), with a research article by [Li-Wen Wang] and colleagues in Nanomaterials describing a two-bit cell (MLC) based around an aluminium-gallium oxide-graphene oxide stack which they tested for an endurance of more than a hundred cycles.
This is a companion discussion topic for the original entry at https://hackaday.com/2024/02/22/using-gallium-oxide-as-a-resistive-memory-element/